A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology

Hao Gao; Jixin Chen; Wei Hong

doi:10.1109/IRMMW-THz46771.2020.9370364

A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology

Hao Gao, Jixin Chen, Wei Hong

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.

Original language	English
Title of host publication	2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Publisher	IEEE Computer Society
Pages	428-429
Number of pages	2
ISBN (Electronic)	9781728166209
DOIs	https://doi.org/10.1109/IRMMW-THz46771.2020.9370364
Publication status	Published - 11 Mar 2021
Event	45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020) - Virtual, Buffalo, United States Duration: 8 Nov 2020 → 13 Nov 2020 Conference number: 45

Conference

Conference	45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)
Abbreviated title	IRMMW-THz
Country	United States
City	Virtual, Buffalo
Period	8/11/20 → 13/11/20

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10.1109/IRMMW-THz46771.2020.9370364

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title = "A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology",

abstract = "This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.",

author = "Hao Gao and Jixin Chen and Wei Hong",

year = "2021",

month = mar,

day = "11",

doi = "10.1109/IRMMW-THz46771.2020.9370364",

language = "English",

pages = "428--429",

booktitle = "2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020",

publisher = "IEEE Computer Society",

address = "United States",

note = "45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020), IRMMW-THz ; Conference date: 08-11-2020 Through 13-11-2020",

}

Gao, H, Chen, J & Hong, W 2021, A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology. in 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020., 9370364, IEEE Computer Society, pp. 428-429, 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020), Virtual, Buffalo, United States, 8/11/20. https://doi.org/10.1109/IRMMW-THz46771.2020.9370364

A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology. / Gao, Hao; Chen, Jixin; Hong, Wei.

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020. IEEE Computer Society, 2021. p. 428-429 9370364.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.

AB - This contribution presents a 0.26 THz power unit in a 0.13 μm SiGe BiCMOS technology with a silicon integrated waveguide as the sub-THz power combiner. This submillimeter-wave frequency power unit is composed of a 2-stage 0.13 THz amplifier array, 1-stage frequency doubler, and an on-chip silicon integrated waveguide power combiner. In this work, a compact power unit is achieved through an on-chip waveguide power combiner. With this compact solution, the area of the core part of this power unit is 200\times 900\mu \mathrm{m}^{2}, and the output power at 0.26 THz is -15 dBm.

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BT - 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020

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T2 - 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)

Y2 - 8 November 2020 through 13 November 2020

ER -

A 0.26 THz Power Unit Integrated with an on-Chip Waveguide in a 0. 13 \mu \mathrm{m} SiGe Technology

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